| PART |
Description |
Maker |
| FCX688B FCX688BTA |
TRANSISTOR NPN 12V 3000MA SOT-89 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON POWER (SWITCHING) TRANSISTOR
|
Zetex Semiconductor PLC
Zetex Semiconductors
|
| BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
| BC550C BC549B BC549B-D BC549C BC550B |
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
Low Noise Transistors NPN Silicon(硅NPN低噪声晶体管) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Low Noise Transistor NPN Silicon(30V硅NPN低噪声晶体管) 低噪声晶体管NPN硅（30V的硅npn型低噪声晶体管）
|
ON Semiconductor
http://
|
| CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五（巴西）总裁|37
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN SILICON TRANSISTORS NPN硅三极管
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BC848 BC849 BC846 BC847 BC850 BC848C-MR |
NPN EPITAXIAL SILICON TRANSISTOR
NPN Epitaxial Silicon Transistor(NPN硅外延晶体管) 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
TRANSISTOR BC848C MINIREEL 500PCS 晶体管BC848C MINIREEL 500
NPN Epitaxial Silicon Transistor(NPN纭??寤舵?浣??)
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
Diodes, Inc.
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
Hybrid transistor
|
NEC, Corp.
|
